New opportunity of ferroelectric tunnel junction memory with ultrathin HfO2-based oxides

Ferroelectric tunnel junctions with ultra-thin Y-doped HfO₂ film was investigated for the low power, high speed, non-volatile memory. Polarization switching-induced resistance change amounts to ~100 in the on/off ratio. The electrode area-dependent current and no need of the forming process show a striking contrast to the filament type of ReRAM. FTJ memory with ferroelectric HfO₂ will provide us a new opportunity in the memory world using CMOS friendly materials and processes.