Parameter optimization for rise time of sub-nanosecond pulser based on avalanche transistors

Sub-nanosecond pulse sources based on avalanche transistors can generate sub-nanosecond high-voltage pulse with the amplitude of several kV, the rise time of about 180 ps and the full Width at Half Maximum (FWHM) of about 220 ps. This type of pulse source, which is widely used in ultra wide band (UWB) radiation systems, electromagnetic compatibility experiments and other researches, is based on the principle of transistor avalanche effect and Marx circuit. In this paper, we will analyze the time limiting factors of rise time of the pulse source. Meanwhile, we introduce the development of a bipolar pulse source, which can effectively improve the bandwidth of UWB radiation system.