Design of a low noise amplifier for LTE radio base station receivers

The objective of this work is to model a low noise amplifier and study the key properties of GaN HEMT LNAs in terms of gain and noise performance, for LTE radio base station receiver front-end design. A well-designed LNA is eventually simulated using Advanced Design System. The design uses microstrip open shunt matching networks, inductors and capacities for DC Biasing. The simulation results show at 2.6 GHz a gain of 18.22 dB, noise figure of 0.34 dB, while VSWRin= 1.613 and VSWRout=1.613 with biasing voltage at 4.35 V.