ZVS-PWM bridgeless active rectifier-applied GaN-HFET zero voltage soft-switching multi-resonant converter for inductive power transfers

This paper presents a novel prototype of a secondary-side BridgeLess Active Rectifier (BLREC)-applied soft-switching resonant dc-dc power converter with high breakdown-voltage Gallium Nitride Heterojunction-Field-Effect-Transistor (GaN-HFET) for inductive power transfer (IPT) applications. The excellent performances such as higher efficiency, low switching noises and normally-off operation are originally demonstrated in experiment of a 700 W-85 kHz prototype with 600 V enhancement-mode single-chip GaN-HFETs. The feasibility of the GaN-HFET zero voltage soft-switching (ZVS) resonant converter and its power control strategy for IPTs is discussed from a practical point of view.