Susceptor coating materials applicable for SiC reactor cleaning

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. In order to develop a cleaning process for the silicon carbide chemical vapor deposition reactor, the susceptor coating materials are developed for protecting the susceptor from the etching by chlorine trifluoride gas. The chlorine trifluoride gas does not cause a serious damage to the pyrolitic carbon film at the temperatures lower than 480 °C, at which temperature the quick and practical reactor cleaning process is expected to be possible.