Research of IGBT-transistor in pulse switch

This paper describes research of influence of gate current and transistor commutation voltage on the switch operation efficiency in IGBT-transistor switch. At research and development of the high-effective energy-saving solutions, we often meet the task of modeling processes related to the electric pulse switch converters. In particular, the task of wind turbine power control cannot be solved today without the energy saving approach, otherwise it will be not commercially effective. The controller of solar panel would also lack efficiency. As a rule, the problem is connected with the switching device, as it should be rapid enough. The important component affecting a general efficiency of such devices is power transistor operating in the switch mode. One of the ways of efficiency increase is reduction of commutation losses as one of the main parameters of pulse converter transistor. The usage of the said component is very wide. It includes all pulse-width modulation controllers and control systems for converters. One of the best applications is wind turbine power controller, which should be rapid and handle high currents at the same time. The current paper shows primarily the advantages of IGBT for battery rapid charge devices widely distributed recently for charging lithium-ion batteries.