Graphene Nanoribbon Tunnel Field-Effect Transistor via Segmented Edge Saturation

In this paper, segmented edge saturation (SES) is proposed as a novel method to design high-performance tunnel FETs (TFETs) using smooth graphene nanoribbon (GNR). When the edges of a smooth GNR are saturated by different elements in its different segments, the energy gaps (Eg) of these segments can be tuned. Therefore, the tunneling and blocking effects are achieved simultaneously by reducing and enlarging the Eg of GNR in its specific regions. Both high on-tooff current (ION/IOFF) ratio and large ION are obtained. Simulation results show that the IOFF of the SES GNR TFET is below 1 × 10
^-4
μA/μm and the ION reaches 2000 μA/μm at 0.4-V supply voltage. Detailed transport mechanisms of this TFET are investigated in comparisons with its uniform saturation counterparts. Dynamic performance and scaling ability analyzes are also carried out. The largest intrinsic delay and switching energy are only 0.17 ps and 0.09 fJ/μm. Meanwhile, it can maintain high ION/IOFF ratios when the channel length is scaled down to several nanometers. The discussions on GNR edge roughness suggest that the roughness should be avoided for better ION behaviors. The good performance of the TFET highlights the capabilities of SES in the developments of GNR tunnel devices.