Mobility and power dissipation due to total phonon scatterings compared with ballistic transport in AlGaN/GaN superlattice

In this paper authors have studied the variation of mobility with device length due to total scattering and ballistic transport in AlGaN/GaN superlattice structure. Here comparisons have also been made between mobility due to total scattering and ballistic transport. Subsequently comparative analysis of power dissipation has also been studied here.