WS2\/Silicon Heterojunction Solar Cells: A CVD Process for the Fabrication of WS2 Films on p-Si Substrates for Photovoltaic and Spectral Responses

With the layer-dependent tunability of their optical band gap in the near-infrared (IR ) to visible spectrum, transition metal dichalcogenides (TMDs), including molybdenum disulfide (MoS
₂
) and tungsten disulfide (WS
₂
), exhibit strong light-matter interactions, making them suitable as absorber layers for optoelectronic devices. Currently, the WS
₂
-based solar cells are fabricated via micromechanical/chemical exfoliation or transfer of two-dimensional (2-D) WS
₂
layers onto conventional three-dimensional (3-D) bulk semiconductors, which poses a challenge for large-scale integrations and consequent device performances.