DESIGN and simlation of UWB LNA using 0.18 μm CMOS technology

This paper proposed an UWB LNA using 0.18μm CMOS technology with a wideband input matching circuit. The cascode structure and source degeneration are adopted to achieve low noise figure and high gain characteristics. Input reflection coefficient and reverse isolation are optimized in UWB band through parametric analysis. The proposed LNA achieves a high gain of 22.082dB at 5.059GHz and minimum noise figure of 1.094dB.