CMOS RF Power Amplifier design for wideband frequency

The design of RF transceiver can be achieved with low cost and full integration, is possible only because of the advanced CMOS technology scaling. Power amplifier (PA) is one of the most important and power hungry blocks of wireless communication system. For achieving the maximum efficiency of PA the new hybrid class EF introduced with 2 stages PA. RF Power amplifier with given frequency range has various application areas like ZigBee, Wi-Fi, mobile communication, also has radar applications. The prototype will be designed with technology of 130 nm CMOS. The main advantage of this hybrid class is to get operating region with wide bandwidth from 1.5 to 3 GHz and also the fast switching operation to get flat top response of voltage and current waveform. The output power can be achieved more than the 19 dBm with efficiency up to 37%. S-Parameters also analyzed gain and reflection coefficients of Power amplifier. The design can be built on Advanced design system (ADS) layout design will be done with less area on die.