Performance analysis of a memristor-based hybrid memory cell with rapid bidirectional storage capability

Technology scaling has been aggressively developed during last several years and almost close to the final states. In order to cope with high density new technology, silicon based memory cell also needs to be replaced by alternate devices. Memristor is one of the promising novel elements for memory cell. This paper proposes a new memristor based hybrid memory cell, which is capable of bidirectional data storage. The present model requires less number of transistors than other recently proposed model. Simulation results of the proposed circuit demonstrate superior competency in terms of read and write time and power consumption as compared with other models.