1-T Capacitorless DRAM Using Bandgap-Engineered Silicon-Germanium Bipolar I-MOS

In this paper, a 1-Transitor (1-T) capacitorless dynamic random access memory (DRAM) using bandgap engineered silicon-germanium Bipolar ionization metal oxide semiconductor field effect transistor (I-MOS) is investigated through numerical simulations. We have demonstrated the application of the proposed Si
_0.6
Ge
_0.4
Bipolar I-MOS for realization of a 1-T capacitorless DRAM. The proposed device can achieve hysteresis at significantly lower drain voltages(V
_LD
= 0.45 V to V
_LU
= 1.15 V), in comparison to the inversion mode device (V
_LD
= 8 V to V
_LU
= 11 V). In addition, the proposed 1-T capacitorless DRAM exhibits a wider hysteresis window (AV) of the order ~700 mV and a sensing margin (AI) of ~5 orders in comparison to the inversion mode based 1-T capacitorless DRAM. Moreover, the proposed 1-T capacitorless DRAM exhibits the retention time of ~750 msec and ~320 msec for T = 25 °C and T = 85 °C, respectively. The proposed 1-T capacitorless DRAM also shows nondestructiveread and an extreme longterm endurance. Therefore, the results presented in this paper can provide an opportunity for future DRAM design in deep nanometer technology.