Temperature-aware data allocation strategy for 3D charge-trap flash memory

Three-dimensional (3D) flash memory is emerging as an attractive solution to overcome the scaling bottleneck in sub-20 nanometer design. Compared to the conventional planar flash memory, current 3D flash memory adopts charge-trap technology that can significantly enhance cell density and storage capacity. Despite these advantages, novel material and fabricate process in charge-trap flash memory bring new challenges. Recent studies demonstrate that charge-trap flash is sensitive to thermal yield. This issue does not happen in two-dimensional flash memory which adopts floating gate technology. For 3D flash memory with charge-trap technology, the high temperature will incur both charge loss and retention degradation. The large capacity data block in 3D flash memory also causes extra garbage collection overhead, which makes the temperature issue even worse. This paper presents TempLoad, a temperature-aware data allocation strategy for 3D charge-trap flash memory. TempLoad is a novel hardware and file system interface that can transparently allocate physical space based on the temperature status. TempLoad adopts several address mapping strategies to fully utilize the storage capacity and reduce the garbage collection overhead. The objective is to prevent the generation of hotspots and enhance the data integrity of 3D flash memory. Experimental results show that the proposed technique can reduce the peak temperature by 28.49% and reduce uncorrectable page errors by 83.71% with negligible timing overhead in comparison with previous work.