Comprehensive evaluation of gate boost driver for SiC-MOSFETs

This paper presents fast, low loss, and low noise gate driver for Silicon-Carbide (SiC) MOSFETs. We proposed gate boost circuit to reduce switching losses and switching delay time without increasing switching noise. The proposed gate driver makes it possible to improve converters efficiency or enhance power density of converters. SiC power devices have attracted huge interest as next generation power devices. Normally, switching performances of power devices have trade-off between switching losses and switching noise. SiC-MOSFETs are expected to be able to faster than Silicon IGBTs, but faster switching might cause switching noise problem such as electromagnetic interferences (EMI). We proposed gate boost circuit to improve switching performances of SiC-MOSFETs, and also confirmed that the proposed gate driver reduce switching losses and delay time with experimental results.