Improvement of Schottky power diode performance by electrode geometry and surround trenching of Schottky contact

This work aims to improve the performance of SiC Schottky power diode with the alternative approach by using trenching around the Schottky electrode. The research was done with PATRAN, a finite modelling method (FEM). The modelling was done with the building of samples with different geometries into two types (the first without trenching around the Schottky electrode and the second was with trenching around Schottky electrode) with the same current through put for every models from both groups). The results show that there is big improvement as the Schottky electrode can take as much as two times the current with the trenching samples in comparison to the non-trenched samples.