A Physics-based drain current compact model for a-InGaZnO thin-film transistors

A physics-based and explicit approximation for surface potential of the amorphous InGaZnO (a-InGaZnO) thin-film transistors (TFTs) with considering both the Gaussian deep and exponential tail distribution of trap states is developed in the case of partial depletion. The analytical calculation of the surface potential is one-piece and suitable for circuit simulations. Based on the surface potential, a drain current compact model is proposed with using the charge sheet approach. Furthermore, our model is verified by the experimental data.