Charge transfer in 1-D HTS mesoscopic tunneling junction arrays

The influence of superconducting energy gap on the performance of single electron transistor as electrometer has been studied and was found out to improve its charge sensitivity. This paper mainly deals with 1-D (dimensional) HTS mesoscopic tunneling junction array made up of HTS material Tl-1223 with capacitively coupling to a ground plan. The layered nature of Tl-1223 acts as ideal SIS junctions. The influence enforced by the superconducting energy gap on the static and dynamics of such an array is studied numerically based on the "Orthodox Theory" of single electronics. The charge transfer in the means of solitons introduced by the voltage source attached to the end of the array is also discussed.