Insight into PBTI in InGaAs nanowire FETs with Al2O3 and LaAlO3 gate dielectrics

The traps induced degradation of the Al₂O₃ and LaAlO₃ based InGaAs nanowire FETs are investigated by 3D Kinetic Monte-Carlo (KMC) method considering trap coupling and trap generation. The measurement time constants of the defect in Al₂O₃ and positive bias temperature instability (PBTI) can be well interpreted by consideration with metastable state. The power law of threshold shift can be greatly affected by the stress. Different from traps in Al₂O₃, oxygen vacancies and interstitial Aluminum ions in LaAlO₃ have important roles in PBTI. Simulated results indicate that Al₂O₃ have better PBTI and recovery than that of LaAlO₃.