High-performance and reliable elevated-metal metal-oxide thin-film transistor for high-resolution displays

Incorporated with the annealing-induced source/drain (S/D), elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) was proposed to provide an etch-stop (ES) layer while retain a small device size for high-resolution displays, which could not be combined in conventional TFT architectures. The “defect-populated” S/D and “defect-free” channel enabled the high performance metrics: a competitive field-effect mobility of ~14 cm
²
/Vs; an extremely low off-current of ~10
^-18
A; an impressive on/off ratio of ~10
¹²
; and the superior reliability against temperature, bias and current stresses.