Approaching ballistic transport in monolayer MoS2 transistors with self-aligned 10 nm top gates

We present the first study of 10 nm self-aligned top-gated field-effect transistors (SATFETs) based on monolayer MoS
₂
. Using a novel fabrication process, we achieve record saturation current, I
_Dsat
> 400 μA/μm, sub-threshold slope down to 80 mV/dec and equivalent oxide thickness (EOT) ≈ 2.5 nm. Combining transistor modeling with careful gate capacitance and contact resistance measurements, we provide the first analysis of diffusive vs. ballistic transport in monolayer MoS
₂
FETs. Results indicate the onset of ballistic transport with transmission up to 0.25 at low temperature. We also suggest a feasible route to advance MoS2 transistors further to the ballistic limit.