Semi-polar InGaN/GaN based long emission wavelength emitter for lighting and displays

Summary form only given. This paper demonstrated high crystal quality semi-polar (11-22) GaN on m-plane sapphire by developing a cost-effective approach of overgrowth on regularly arrayed micro-rod arrays. TEM and XRD measurements show that the crystal quality of our semi-polar GaN has approached that of current c-plane GaN on sapphire for growth of ultra-high brightness blue LEDs. Furthermore, semi-polar (11-22) InGaN LEDs grown on our semi-polar overgrown GaN templates witha wide spectral region of up to amber have been demonstrated, demonstrating major advantages of semi-polar LEDs compared with current c-plane LEDs in terms of reducing efficiency droop and resolving the "green and yellow" gap issues. A further polarized feature exhibited by these semi-polar long emission wavelength LEDs also enhances their applications in fabricating next generation white lighting sources for displays.