Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design)

The strain distribution and electrical characteristics of heterojunction with intrinsic thin layer (HIT) solar cells with mechanical bending are studied in this work. The degradation due to the strain can be indeed suppressed with wafer absorber thinning down under mechanical bending and leads Voc, Jsc, F.F. and η exhibiting excellent mechanical reliability. The advantage of wafer thinning down for HIT is not only decreasing electron-hole recombination, but also improving the mechanical reliability of solar cells.