Room Temperature GaN-Based Edge-Emitting Spin-Polarized Light Emitting Diode

Room temperature circularly polarized electroluminescence is observed from bulk GaN-based double-heterostructure edge-emitting light emitting diodes operated with continuous-wave spin-polarized electrical injection. The measured in-plane magnetizing field-dependent output circular polarization in the quasi-Voigt geometry is coincident with the hysteresis characteristics of the spin-injector confirming electron spin injection in remanence from the n-type FeCo/MgO tunnel spin contacts. A peak output circular polarization of ~6 ± 1% is measured at 300 K.