Parametric analysis of amorphous silicon thin film transistors

The growing interest for flexible electronic applications has made Thin film Transistors (TFT) a hot topic of research today. Many different types of TFT devices are reported for a variety of applications. In this paper we have studied the behavior of drain current of amorphous silicon TFT with respect to different parameters. During the study the parameter of interest is varied while the other parameters are kept constant. The behavior of drain current is studied with respect to the parameters: channel length, dielectric thickness, doping concentration and size of the transistor. In addition to this the, the effect of dielectric material on drain current is also investigated. The simulation are carried out in Silvaco Atlas. It is found that the transistor with lesser channel length, thinner dielectric layer, and high doping concentration of source and drain and smaller size has higher drain current.