The numerical criterion of the compementary pair of bipolar transistors

In this work, we introduced a new numeric, multi-parameter criterion of the complementary pair of bipolar transistors. Graphical form of the criterion is simple and clear. This criterion applies to all modern structures vertical bipolar transistors: classical planar-epitaxial, self - alignment with polysilicon layers, heterojunction bipolar transistors with Si-Ge epitaxial base.