The enhancement of high speed pHEMT device for IoT applications

We report the enhancements on pHEMT epilayers to suite the high speed applications for IoT. Presented here are the DC and RF comparisons between XMBE #109 as the baseline of high speed pHEMT and VMBE #2100 as the enhanced epitaxial layer. The Hall data from Van der Pauw measurement shows higher sheet carrier concentration is observed on the improved epitaxial layer devices. The DC comparisons between the devices from both epilayers verified that the enhanced epitaxial layer demonstrates low leakage-high breakdown characteristics. Improvement of transconductance and output current density also been observed from the VMBE #2100 epitaxial layer. The RF characteristics, however, show comparable f_T of 25 GHz. In short, this will facilitates the implementation of high speed circuits, including high speed broadband systems for IoT applications.