Slow wave propagation in metal-insulator-semiconductor-ferrite structures operating in the vicinity of resonance

The effect of inserting a magnetic layer beneath the semiconductor layer in a Metal-Insulator-Semiconductor (MIS) structure is studied. The proposed structure is called "Metal-Insulator-Semiconductor-Ferrite" (MISF). A closed form expression for the resonance frequency of the MISF structure is derived. This new resonance appears due to the insertion of the magnetic layer in addition to the already existing dielectric insulating material. That resonance will cause an increase in the slow wave factor at high frequencies which was never achieved in conventional MIS structures. The analytical results derived in this paper are in perfect agreement with full-wave simulations. Practical considerations of using the proposed structure are investigated, with special regards to wave attenuation and losses.