High bandwidth current sensing of SiC MOSFET with a Si current mirror

SiC Intelligent Power Module (IPM) with high bandwidth integrated current sensors is a future trend to improve the device protection capability and chip utilization. In this work, an integrated current sensing scheme for Silicon Carbide (SiC) MOSFET power module using a Si MOSFET current mirror is proposed, analyzed and tested. The use of Si MOSFET not only lowers the overall cost, but compensates the temperature variation as well. The influence of device mismatching on sensing accuracy are discussed. Optimal selection and trade-off of sensing resistor value are calculated. Discrete device circuit and conceptual DBC-based module are tested to verify the scheme's feasibility and performance. The results show good steady state accuracy and high bandwidth performance.