High frequency noise characterization of BiCMOS transistors over temperature

This paper presents the high frequency noise characterization of bipolar and MOSFET devices over temperature. The device noise parameter calculation based on Y-parameters is utilized to compare with the results from measurement over temperature. Based on the calculated and measured results, this paper will discuss the device model parameters which impact the temperature dependence of noise properties. Methods for on-wafer device noise and S-parameter measurement and analysis will be illustrated. Based on the Y-parameter equivalent circuits, we demonstrate a method to simplify the full noise characterization by calculating the four noise parameters from the device's S-parameter data. The noise properties of two sample devices: SiGe HBT and NMOS are measured and calculated at 25 °C, 50 °C, 100 °C and 125 °C to verify and improve the noise characterization methodology.