Comparison of conductivities obtained from dielectric spectroscopy and time domain measurements

Electrical properties of dielectrics materials have not been a particular interest in semiconductor packaging for low voltage applications. However, with increasing device operating voltages and temperatures, the electrical properties of wafer and package level dielectric materials become significantly important because of degradation in performance due to silicon-package interaction, corrosion issues at wire-bond sites or issues related to high voltage performance. The requirement for accurate electrical conductivity measurements and insights on measurements on low loss dielectrics (an elaborate technique to measure the conductivity of dielectrics) would be presented and discussed. A method was proposed and was applied to a well-known dielectric film. The results were compared to previous data presented in the literature [1].