Linearity performance of Gate Metal Engineered (GME) Omega Gate-Silicon Nanowire MOSFET: A TCAD study

In this work, detailed investigation of linear behavior of Gate Metal Engineered (GME) Omega Gate Silicon Nanowire (SiNW) MOSFET has been studied and results so obtained are simultaneously compared with Omega gate SiNW MOSFET using TCAD quantum study. In the comparison of GME-Omega Gate-SiNW MOSFET and Omega-Gate SiNW MOSFET, the former shows superior linearity performance in terms of higher order harmonics such as VIP2, VIP3 and IIP3 with lower intermodulation distortion. This has been substantiated through various analytical expressions which correlate linearity with the device parameters. Thus, signifies that Omega-Gate SiNW MOSFET is a potential candidate for linear RF applications.