Novel approach to trapping effect modeling based on chalmers model and pulsed S-parameter measurements

This paper presents a novel approach to account for trapping effects in GaN HEMT devices. Recent works demonstrated good results relying on physics-based model enhancements. Unfortunately, none of the models is yet part of standard HEMT models in commercial circuit simulators, and the effort in model parameter extraction is high. In this work, we were able to show that a comparable model accuracy can be achieved using the standard Chalmers (Angelov) model extracted from pulsed S-parameters. It is shown that a broad range of drain bias voltages can be covered if only three model parameters are adjusted with limited addtional measurement effort.