Improvement of interfacial properties of Al2O3/GaSb using O2 plasma postoxidation process

X-ray photoelectron spectroscopy analysis was performed in order to investigate the effect of an oxygen (O2) plasma postoxidation process on the Al2O3 / GaSb interface. We studied the effect of passivation using diluted ammonia NH4OH and ammonium sulfide (NH4)2S solutions. After passivation, we noticed creation of oxygen or sulfur bonding to Ga and Sb on GaSb surface. Then, a reduction of interface oxidation during post deposition annealing was observed using O2 plasma postoxidation process.