Enhanced ground bounce noise reduction in low leakage CMOS multiplier cell

The continuously scaling down of technology, leakage current is increasing exponentially. Multi-Threshold complementary metal-oxide-semiconductor (MTCMOS) is one of the mostly used circuit technique to reduce leakage current in idle circuit. When a conventional circuit operates from the sleep-to-active mode transaction, the circuit was suffering from ground bounce noise problem. This paper designed our multiplier with Signal Stepped Ultra Low Power Diode Based (SS-ULP DB) MTCMOS techniques. This technique reduced ground bounce noise up-to 99.7% and standby leakage current up-to 94.45% respectively. The dependence of ground bounce noise, active power and standby leakage current on voltage variation, temperature and transistor sizing has been shown. Simulation results of multiplier have been performed with CMOS technology.