Dynamic performance of graphene field effect transistor with contact resistance

Here we report the impact of source/drain contact resistance on the dynamic characteristics of large area Graphene Field Effect Transistor (GFET). Although silicon has been the most widely used semiconductor in the channel of MOSFETs, it is approaching to its physical limits. On the other hand, graphene has been deeply studied as a potential alternative; however its zero band gap forbids the applicability in logic devices. Still GFETs have a great prospect in radio frequency (RF) and microwave devices mainly due to its excellent transport as well as structural properties. Here we found the contact resistance of realistic devices with Ti, Au, Pt, and Ni contact has a great impact on the transconductance as well as the cut-off frequency of the device. They are found to decrease by almost 60% when contact resistance goes to 750 Ω.