Influence of annealing temperature on magnetoresistance of ultrathin Fe and Co films

The results of an experimental study of influence of annealing temperature on magnetoresistance of ultrathin Fe and Co films are discussed. It was found that the tunnel magnetoresistance is implemented for the as-condensed Co and Fe films in the range of thickness of d_Co = 5-25 nm and d_Fe = 7-30 nm. The annealing at the temperature of 700 K does not change the type of magnetoresistance for Fe films. Annealing of Co films in the range of effective thickness of 15-25 nm leads to the emergence of anisotropic magnetoresistance.