The investigation for In-Ga-Zn-O TFTs with post deposition of in-situ Ar/H2 plasma treatment by atmospheric pressure plasma Jet

Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was applied for the fabrication of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). In this work, a-IGZO TFTs fabricated by AP-PECVD technique were firstly treated by post deposition of in-situ Ar/H₂ plasma with atmospheric pressure plasma Jet (APPJ). Compared to without plasma treatment, samples with the post in-situ Ar/H₂ plasma treatment on IGZO active layer exhibited higher mobility of 20.12 cm²/V·S, V_T of 1.11 V, lower subthreshold swing of 93 mV/decade, higher I_on/I_off of 5.34×10⁷. The excellent IGZO TFTs fabricated by AP-PECVD technique also show highly transparent characteristics.