Neutral beam oxidation for oxide-based nanodevice

In this paper, we show a low temperature neutral beam oxidation process to obtain a high quality metallic oxide film. After irradiation of a Ta metal film with a neutral oxygen beam, a nm-thick Ta₂O₅ film with a high film density was obtained, and a fabricated Cu/Ta₂O₅/Pt resistive memory (ReRAM) structure showed a bipolar resistive switching characteristic. In addition, after the deposition of a 1-nm-thick Al film on a Ge substrate, the simultaneous oxidation of Al and Ge was carried out at 300 °C, and a fabricated Au/AlO_x/GeO_x/Ge/Al MOS gate structure showed a C-V characteristic. These results demonstrate the great potential of neutral beam oxidation for the development oxide-based nanodevices.