High-Linearity W-Band Amplifiers in 130 nm InP HBT Technology

We present a high-linearity pseudo-differential Wband amplifier IC, implemented in a 130 nm InP HBT process in a 1.1×0.72 mm² die. Correcting for test structure losses, the amplifier has a measured 21.9 dBm output-referred 3^rd order intercept point (OIP3) and a single-stage gain of 6.4 dB at 100 GHz. The amplifier has a noise figure of 6.8 dB +/-1dB at 95 GHz. The OIP3/Pdc ratio is 0.79 at 100 GHz. To the author's knowledge, these are among the first reported dynamic range measurements for W-band amplifiers.