A GaN-Based 10.1MHz Class-F-1 300 W Continuous Wave Amplifier Targeting Industrial Power Applications

This paper investigates a novel AlGaN/GaN HEMT-based high power amplifier for continuous wave operation in industrial power applications. A GaN HEMT device with a power density of 50 W/mm² was developed to counter specific challenges in these applications. Based on RF load-pull measurements of the developed transistors an inverse class-F power amplifier with an output power of 300 W and an efficiency of 74 % at 10 MHz was implemented and investigated.