Two-dimensional analysis of carrier distribution in phosphorus-implanted emitter and phosphorus-diffused emitter using super-higher-order scanning nonlinear dielectric microscopy

Two-dimensional carrier distributions in phosphorus (P)-implanted emitter and P-diffused emitter were analyzed using super-higher-order scanning nonlinear dielectric microscopy (SHO-SNDM). The carrier distribution was clearly visualized and quantified using calibration sample. P-type, n-type and depletion layer was discriminated from local capacitance-voltage characterization obtained from SHO-SNDM measurement. The n-type region and depletion layer distribution depended on the surface texture. The position of p-n junction was estimated near the p-type region in depletion layer. The n-type region and depletion layer distribution was thicker in P-implanted emitter than P-diffused emitter.