Highly compact electronics: Inverter with GaN transistors

Summary form only given. In the field of wide band gap semiconductors, Gallium-Nitride (GaN) seems to be a very promising material. Newly available commercial GaN transistors with 650 V blocking voltage demonstrate particularly fast switching times thanks to their lateral structure. Also, low conduction losses, high temperature capability and high cost reduction potential makes GaN particular suited for next generation power electronics. This paper presents a highly efficient single-phase PV inverter with integrated boost-converter using GaN-HEMTs switched at 250 kHz.