Comparison of InAs/GaAs and InGaAs/GaAs quantum dot solar cells and effect of post-growth annealing on their optical properties

We have reported InAs/GaAs and InGaAs/GaAs quantum dot solar cells (QDSCs) and the effect of rapid thermal annealing (RTA) on their optical properties. A thermal stability was observed up to 700°C, and further increase in temperature results in a blue shift in photoluminescence (PL) emission peak. A maximum open circuit voltage (Voc) of 0.33V was obtained for the InGaAs/GaAs solar cell (SC), whereas a maximum short circuit current (Jsc) of 20 mA/cm
²
was obtained for the InAs/GaAs SC. A fill factor (FF) of 0.31, and 3.0758% efficiency was obtained for the InGaAs/GaAs SC which is higher than the InAs/GaAs QDSC.