Direct evidence for pn junction without degradation in crystalline Si photovoltaic modules under hygrothermal stresses

Origin of degradation in output power for crystalline Si photovoltaic modules by hygrothermal stresses was studied. The direct evidence that pn junction is hardly damaged and the origin is damage in Ag finger electrodes was obtained through the experiments composed of removal of degraded finger electrodes and reconstruction of electrodes. It was suggested that electrode is final defense for reliability of photovoltaic modules under hygrothermal stresses. The most important issue for highly reliable photovoltaic modules may be the development of electrode materials with toughness against acetic acid.