An Algorithm for Extraction of Threshold Voltage in Heterojunction TFETs

This paper presents and validates an algorithm based on two-dimensional Poisson's Equation, and proposed “tangents on surface potential plots” approach to extract threshold voltage in a silicon tunnel field effect transistor (TFET) with a SiGe layer at tunnel junction. The approach stands valid for homojunction Silicon TFET and SiGe channel Silicon TFET.