InP HEMT lightwave communication ICs for 40 Gbit/s and beyond

Ultrahigh-speed integrated-circuit technology is one of the keys to achieving ultralarge-capacity optical communication systems. Technological breakthroughs in circuit and packaging design as well as improved transistor performance are needed to reach the over-40 Gbit/s operating region. This paper describes a 0.1 /spl mu/m gate InP HEMT, novel circuit design, and broadband packaging technologies developed to boost the circuit speed. We used these technologies to make 40 Gbit/s lightwave communication ICs. This paper also describes the problems in moving toward 100 Gbit/s operation.