Dielectric analysis and measurements of thermally evaporated erbium fluoride thin films

Very high precision capacitors with good stability are required for the fabrication of thin film hybrid integrated circuits. Materials that warrant such attention include rare earth fluorides and oxides owing to their mechanical and chemical stability [1]. Erbium fluoride films have been studied with regard to its electroluminescence only [2]. This paper reports an investigation on the dielectric analysis and measurements of thermally evaporated erbium fluoride thin films.