Back enhanced (BE) SOI pMOSFET behavior at high temperatures

This paper reports for the first time the behavior of the new BE SOI pMOSFET at high temperatures up to 125°C. In spite of the conduction mechanism takes place at the back interface in this device, it was obtained an increase of the threshold voltage (up to 1.5 mV/ °C) and a decrease of the transconductance (c-factor up to 1.3) with the temperature increase, which is stronger than the observed for the conventional FD SOI MOSFET. The zero-temperature coefficient (ZTC) was also observed. Furthermore, a simple model was applied to calculate the ZTC bias point, and the model presents a good agreement with experimental data. The body factor is almost negligible within this temperature and the subthreshold slope presents a strong degradation at high temperature.