Gas source MBE growth of InP under In-rich conditions

In this study, the epitaxial growth of InP was pushed to In-rich conditions. It was found that the InP growth rate was limited by the PH/sub 3/ flow rate and the excess In atoms would accumulate on the growing surface and thus roughen the surface morphology. Furthermore, the low 8K and 300K PL intensities of the InP epilayers grown under In-rich conditions may be due to the defects generated by the In droplets. However, by removing the In droplets on the surface or inserting a periodic interruption stage in the In-rich conditions, the 300K and 8K PL intensity was 40 and 3 times larger than that grown under P/sub 2/-stabilized conditions, respectively. This improvement may result from the higher migration ability of In atoms under In-rich conditions.